RUS100N02TB

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:12mOhm @ 10A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:24 nC @ 4.5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):2W (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOP
• Package / Case:8-SOIC (0.154", 3.90mm Width)