FCMT360N65S3

ON Semiconductor
In Stock: 287,524,175

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Pricing:
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Technical Details

  • Series:SuperFET® III
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):650 V
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:360mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 200µA

 

  • Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 400 V
  • FET Feature:-
  • Power Dissipation (Max):83W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:4-PQFN (8x8)
  • Package / Case:4-PowerTSFN

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