RD3S100CNTL1
ROHM Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 190V 10A TO252
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet RD3S100CNTL1 Datasheet
-
ECAD Model
- Share
In Stock: 2,518
Can ship immediately
Pricing:
- 1$2.04
- 2,500$0.91334
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Technical Details
- Series:-
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):190 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4V, 10V
- Rds On (Max) @ Id, Vgs:182mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):85W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
