2SJ661-DL-1E

Technical Details

• Series:-
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:38A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:39mOhm @ 19A, 10V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4360 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):1.65W (Ta), 65W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263-2
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB