TK55S10N1,LQ

Technical Details

• Series:U-MOSVIII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:55A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:6.5mOhm @ 27.5A, 10V
• Vgs(th) (Max) @ Id:4V @ 500µA

• Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3280 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):157W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK+
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63