STB80NF55L-08-1

Technical Details

• Series:STripFET™ II
• Package:Tube
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):55 V
• Current - Continuous Drain (Id) @ 25°C:80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Rds On (Max) @ Id, Vgs:8mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:100 nC @ 4.5 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:4350 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):300W (Tc)
• Operating Temperature:175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:I2PAK
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA