STB18NM60ND
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 13A D2PAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STB18NM60ND Datasheet
-
ECAD Model
- Share
In Stock: 182
Can ship immediately
Pricing:
- 1$5.8
- 1,000$3.15445
- 2,000$3.01405
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Technical Details
- Series:FDmesh™ II
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:290mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:1030 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):110W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D2PAK
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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