SIHB33N60ET1-GE3
Vishay / Siliconix
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 33A TO263
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet SIHB33N60ET1-GE3 Datasheet
-
ECAD Model
- Share
In Stock: 898
Can ship immediately
Pricing:
- 1$6.47
- 800$4.0282
- 1,600$3.775
- 2,400$3.59776
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Technical Details
- Series:E
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:99mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:3508 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):278W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-263 (D²Pak)
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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