TSM60NB099CF C0G

TSC (Taiwan Semiconductor)
In Stock: 113

Can ship immediately

Pricing:
  • 1$6.95
  • 10$6.20283
  • 100$5.08561
  • 500$4.11814
  • 1,000$3.47312

Quote It

Technical Details

  • Series:-
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:99mOhm @ 5.3A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:62 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:2587 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):69W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:ITO-220S
  • Package / Case:TO-220-3 Full Pack

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