STW58N65DM2AG
STMicroelectronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 48A TO247
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet STW58N65DM2AG Datasheet
-
ECAD Model
- Share
In Stock: 739
Can ship immediately
Pricing:
- 1$10.92
- 30$8.95077
- 120$8.07738
- 510$6.76755
- 1,020$5.89431
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Technical Details
- Series:Automotive, AEC-Q101, MDmesh™ DM2
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:65mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id:5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
- Vgs (Max):±25V
- Input Capacitance (Ciss) (Max) @ Vds:4100 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):360W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247
- Package / Case:TO-247-3
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