2N7002ET1G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionSMALL SIGNAL FIELD-EFFECT TRANSI
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2N7002ET1G Datasheet
-
ECAD Model
- Share
In Stock: 6,346
Can ship immediately
Pricing:
- 1$0.02
- 3,000$0.00378
- 6,000$0.00342
- 15,000$0.00299
- 30,000$0.0027
- 75,000$0.00241
- 150,000$0.00203
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:2.5Ohm @ 240mA, 10V
- Vgs(th) (Max) @ Id:2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:0.81 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:26.7 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):300mW (Tj)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:SOT-23-3 (TO-236)
- Package / Case:TO-236-3, SC-59, SOT-23-3
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