NTNS3C94NZT5G

Rochester Electronics
In Stock: 153

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Pricing:
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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):12 V
  • Current - Continuous Drain (Id) @ 25°C:384mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:480mOhm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:35 pF @ 9.6 V
  • FET Feature:-
  • Power Dissipation (Max):120mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:3-XLLGA (0.62x0.62)
  • Package / Case:3-XFDFN

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