CSD13303W1015

Technical Details

• Series:NexFET™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):12 V
• Current - Continuous Drain (Id) @ 25°C:31A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Rds On (Max) @ Id, Vgs:20mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id:1.2V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:4.7 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:715 pF @ 6 V
• FET Feature:-
• Power Dissipation (Max):1.65W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-DSBGA
• Package / Case:6-UFBGA, DSBGA