IRLR2705TRPBF

Rochester Electronics
In Stock: 11,304

Can ship immediately

Pricing:
  • 1$0.22
  • 2,000$0.22
  • 6,000$0.20644
  • 10,000$0.19967

Quote It

Technical Details

  • Series:HEXFET®
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:40mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):68W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:D-Pak
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

Related Products


PMZ350XN,315

MOSFET N-CH 30V 1.87A DFN1006-3

PMZ350XN,315 Datasheet
  • 1: $0.22000

NVTFS4C13NWFTAG

MOSFET N-CH 30V 14A 8WDFN

NVTFS4C13NWFTAG Datasheet
  • 1: $0.22000
  • 1500: $0.22000

FDU3N40TU

POWER FIELD-EFFECT TRANSISTOR, 2

FDU3N40TU Datasheet
  • 1: $0.22000
  • 10: $0.19327
  • 100: $0.14913

NVMFS5C680NLWFT1G

MOSFET N-CH 60V 8.1A/21A 5DFN

NVMFS5C680NLWFT1G Datasheet
  • 1: $0.22000
  • 1500: $0.22000

BSC0996NSATMA1

MOSFET N-CH 34V 13A TDSON-8-5

BSC0996NSATMA1 Datasheet
  • 1: $0.22000
  • 5000: $0.22000

FDMS8888

MOSFET N-CH 30V 13.5A/21A 8PQFN

FDMS8888 Datasheet
  • 1: $0.22000
  • 3000: $0.22000

IPU60R1K0CEAKMA2

MOSFET N-CH 600V 4.3A TO251-3

IPU60R1K0CEAKMA2 Datasheet
  • 1: $0.22000
  • 1500: $0.22000

BSD316SNL6327XT

MOSFET N-CH 30V 1.4A SOT363-6

BSD316SNL6327XT Datasheet
  • 1: $0.22000
  • 3000: $ 0.09790

HUFA75307T3ST

MOSFET N-CH 55V 2.6A SOT223-4

HUFA75307T3ST Datasheet
  • 1: $0.23000
  • 4000: $0.23000

NTD4969NT4G

MOSFET N-CH 30V 9.4A/41A DPAK

NTD4969NT4G Datasheet
  • 1: $0.23000
  • 2500: $0.21568
  • 5000: $0.20177

Top