IPSA70R950CEAKMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 700V 8.7A TO251-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPSA70R950CEAKMA1 Datasheet
-
ECAD Model
- Share
In Stock: 144,130
Can ship immediately
Pricing:
- 1$0.25
- 10$0.2189
- 100$0.16887
- 500$0.12509
- 1,000$0.10008
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Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):700 V
- Current - Continuous Drain (Id) @ 25°C:8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:950mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:15.3 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:328 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):94W (Tc)
- Operating Temperature:-40°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO251-3-347
- Package / Case:TO-251-3 Stub Leads, IPak
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