IPS80R2K4P7AKMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 2.5A TO251-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPS80R2K4P7AKMA1 Datasheet
-
ECAD Model
- Share
In Stock: 10,616
Can ship immediately
Pricing:
- 1$0.29
- 10$0.25288
- 100$0.195
- 500$0.14444
- 1,000$0.11555
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Technical Details
- Series:CoolMOS™ P7
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:2.4Ohm @ 800mA, 10V
- Vgs(th) (Max) @ Id:3.5V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 500 V
- FET Feature:-
- Power Dissipation (Max):22W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:PG-TO251-3
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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