FQU2N60CTU
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FQU2N60CTU Datasheet
-
ECAD Model
- Share
In Stock: 8,345
Can ship immediately
Pricing:
- 1$0.33
- 10$0.29187
- 100$0.23062
- 500$0.17885
- 1,000$0.1412
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Technical Details
- Series:QFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.7Ohm @ 950mA, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:235 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 44W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:I-PAK
- Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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