NTD20P06LT4G
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet NTD20P06LT4G Datasheet
-
ECAD Model
- Share
In Stock: 5,143
Can ship immediately
Pricing:
- 1$0.39
- 2,500$0.38519
- 5,000$0.35863
- 12,500$0.34534
- 25,000$0.3381
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:15.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):5V
- Rds On (Max) @ Id, Vgs:150mOhm @ 7.5A, 5V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:26 nC @ 5 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.19 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):65W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DPAK
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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