IRLR3636PBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 50A DPAK
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRLR3636PBF Datasheet
-
ECAD Model
- Share
In Stock: 16,248
Can ship immediately
Pricing:
- 1$0.49
- 10$0.44462
- 100$0.36204
- 500$0.28709
- 1,000$0.24212
Quote It
Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:6.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:49 nC @ 4.5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:3.779 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):143W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:D-Pak
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
