IPD80R1K0CEBTMA1
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 5.7A TO252-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPD80R1K0CEBTMA1 Datasheet
-
ECAD Model
- Share
In Stock: 22,396
Can ship immediately
Pricing:
- 1$0.57
- 2,500$0.57
- 5,000$0.54491
- 12,500$0.52698
- 25,000$0.51264
- 62,500$0.4983
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Technical Details
- Series:CoolMOS™
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:950mOhm @ 3.6A, 10V
- Vgs(th) (Max) @ Id:3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:785 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):83W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-252-3
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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