NTTFS4H05NTAG

Rochester Electronics
In Stock: 1,678

Can ship immediately

Pricing:
  • 1$0.59
  • 1,500$0.59
  • 3,000$0.55271
  • 7,500$0.52659
  • 10,500$0.50795

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Technical Details

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):25 V
  • Current - Continuous Drain (Id) @ 25°C:22.4A (Ta), 94A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.3mOhm @ 30A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA

 

  • Gate Charge (Qg) (Max) @ Vgs:18.9 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1.205 pF @ 12 V
  • FET Feature:-
  • Power Dissipation (Max):2.66W (Ta), 46.3W (Tc)
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-WDFN (3.3x3.3)
  • Package / Case:8-PowerWDFN

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