IPS80R600P7AKMA1

Technical Details

• Series:CoolMOS™ P7
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):800 V
• Current - Continuous Drain (Id) @ 25°C:8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:600mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 170µA

• Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 500 V
• FET Feature:-
• Power Dissipation (Max):60W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO251-3-342
• Package / Case:TO-251-3 Stub Leads, IPak