TPS1100DR

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):15 V
• Current - Continuous Drain (Id) @ 25°C:1.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
• Rds On (Max) @ Id, Vgs:180mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id:1.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:5.45 nC @ 10 V
• Vgs (Max):+2V, -15V
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):791mW (Ta)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOIC
• Package / Case:8-SOIC (0.154", 3.90mm Width)