IPB80N03S4L02ATMA1

Technical Details

• Series:OptiMOS™
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2.4mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 90µA

• Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:9.75 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):136W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PG-TO263-3-2
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB