IRFB31N20DPBF
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionIRFB31N20 - N-CHANNEL POWER MOS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IRFB31N20DPBF Datasheet
-
ECAD Model
- Share
In Stock: 2,315
Can ship immediately
Pricing:
- 1$0.92
- 10$0.83709
- 100$0.68204
- 500$0.54129
- 1,000$0.45683
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):200 V
- Current - Continuous Drain (Id) @ 25°C:31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:82mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:5.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2.37 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):3.1W (Ta), 200W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220AB
- Package / Case:TO-220-3
