BSC024NE2LSATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 25V 25A/100A TDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSC024NE2LSATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 7,952
Can ship immediately
Pricing:
- 1$1
- 5,000$0.41909
- 10,000$0.40333
- 25,000$0.40104
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):25 V
- Current - Continuous Drain (Id) @ 25°C:25A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:2.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 12 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 48W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TDSON-8-5
- Package / Case:8-PowerTDFN
Related Products
MOSFET N-CH 60V 40A TSDSON
- 1: $1.02000
- 5000: $0.42636
MOSFET N-CH 30V 75A TO220AB
- 1: $1.02000
IAUC60N04S6L039ATMA1
- 1: $0.99000
