TPS1101PWR

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):15 V
• Current - Continuous Drain (Id) @ 25°C:2.18A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.7V, 10V
• Rds On (Max) @ Id, Vgs:90mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id:1.5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:11.25 nC @ 10 V
• Vgs (Max):+2V, -15V
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):710mW (Ta)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:16-TSSOP
• Package / Case:16-TSSOP (0.173", 4.40mm Width)