NTMFS4H013NFT1G

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:43A (Ta), 269A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:0.9mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.1V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3.923 pF @ 12 V
• FET Feature:-
• Power Dissipation (Max):2.7W (Ta), 104W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN