FDP16AN08A0
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 9
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FDP16AN08A0 Datasheet
-
ECAD Model
- Share
In Stock: 15,997
Can ship immediately
Pricing:
- 1$1.38
- 800$1.38
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Technical Details
- Series:PowerTrench®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):75 V
- Current - Continuous Drain (Id) @ 25°C:9A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:16mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id:4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1.857 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):135W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220-3
- Package / Case:TO-220-3
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