IRFB4229PBF

Technical Details

• Series:HEXFET®
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):250 V
• Current - Continuous Drain (Id) @ 25°C:46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:46mOhm @ 26A, 10V
• Vgs(th) (Max) @ Id:5V @ 250µA

• Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
• Vgs (Max):±30V
• Input Capacitance (Ciss) (Max) @ Vds:4.56 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):330W (Tc)
• Operating Temperature:-40°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-220AB
• Package / Case:TO-220-3