AUIRL7766M2TR
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 10A DIRECTFET
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet AUIRL7766M2TR Datasheet
-
ECAD Model
- Share
In Stock: 10,920
Can ship immediately
Pricing:
- 1$1.61
- 4,800$1.25969
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Technical Details
- Series:HEXFET®
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Rds On (Max) @ Id, Vgs:10mOhm @ 31A, 10V
- Vgs(th) (Max) @ Id:2.5V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:66 nC @ 4.5 V
- Vgs (Max):±16V
- Input Capacitance (Ciss) (Max) @ Vds:5.305 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):2.5W (Ta), 62.5W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:DIRECTFET™ M4
- Package / Case:DirectFET™ Isometric M4
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