IPB80N04S403ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 40V 80A TO263-3-2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB80N04S403ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,575
Can ship immediately
Pricing:
- 1$1.71
- 1,000$0.79314
- 2,000$0.74026
- 5,000$0.70325
- 10,000$0.67681
Quote It
Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):40 V
- Current - Continuous Drain (Id) @ 25°C:80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:3.3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:4V @ 53µA
- Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5260 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):94W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3-2
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
MOSFET N-CH 100V 73A D2PAK
- 1: $1.71000
MOSFET N-CH 650V 16A TO252-3
- 1: $1.73000
