2SK4177-DL-1E
Rochester Electronics
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionPOWER FIELD-EFFECT TRANSISTOR, 2
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet 2SK4177-DL-1E Datasheet
-
ECAD Model
- Share
In Stock: 668
Can ship immediately
Pricing:
- 1$2.03
- 800$2.03
- 1,600$1.89467
- 2,400$1.79993
Quote It
Technical Details
- Series:-
- Package:Bulk
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):1.5 V
- Current - Continuous Drain (Id) @ 25°C:2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:13Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id:-
- Gate Charge (Qg) (Max) @ Vgs:37.5 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:380 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):80W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:TO-263-2
- Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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