3N163 DIE

Technical Details

• Series:-
• Package:Tray
• Part Status:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:50mA
• Drive Voltage (Max Rds On, Min Rds On):20V
• Rds On (Max) @ Id, Vgs:250Ohm @ 100µA, 20V
• Vgs(th) (Max) @ Id:5V @ 10µA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):-6.5V
• Input Capacitance (Ciss) (Max) @ Vds:3.5 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-
• Mounting Type:Surface Mount
• Supplier Device Package:Die
• Package / Case:Die