BSC079N10NSGATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 100V 13.4A 8TDSON
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet BSC079N10NSGATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 4,997
Can ship immediately
Pricing:
- 1$2.87
- 5,000$1.31554
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Technical Details
- Series:OptiMOS™
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Not For New Designs
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:13.4A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:7.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5900 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):156W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TDSON-8-1
- Package / Case:8-PowerTDFN
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