IPT65R195G7XTMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 14A 8HSOF
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPT65R195G7XTMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,896
Can ship immediately
Pricing:
- 1$3.43
- 2,000$1.78617
- 6,000$1.71902
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Technical Details
- Series:CoolMOS™ C7
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:195mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id:4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:996 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):97W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-HSOF-8-2
- Package / Case:8-PowerSFN
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