BTS121ANKSA1

Technical Details

• Series:TEMPFET®
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Rds On (Max) @ Id, Vgs:100mOhm @ 9.5A, 4.5V
• Vgs(th) (Max) @ Id:2.5V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:-
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:1.5 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):95W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220-3
• Package / Case:TO-220-3