IPT029N08N5ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 80V 52A/169A HSOF-8
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPT029N08N5ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,925
Can ship immediately
Pricing:
- 1$4.87
- 2,000$2.44568
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Technical Details
- Series:OptiMOS™ 5
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):80 V
- Current - Continuous Drain (Id) @ 25°C:52A (Ta), 169A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):6V, 10V
- Rds On (Max) @ Id, Vgs:2.9mOhm @ 150A, 10V
- Vgs(th) (Max) @ Id:3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs:87 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 40 V
- FET Feature:-
- Power Dissipation (Max):168W (Tc)
- Operating Temperature:-55°C ~ 175°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-HSOF-8
- Package / Case:8-PowerSFN
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