IPB60R099C7ATMA1
IR (Infineon Technologies)
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 22A TO263-3
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet IPB60R099C7ATMA1 Datasheet
-
ECAD Model
- Share
In Stock: 1,027
Can ship immediately
Pricing:
- 1$5.79
- 1,000$3.17328
- 2,000$3.01461
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Technical Details
- Series:CoolMOS™ C7
- Package:Tape & Reel (TR)Cut Tape (CT)
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:99mOhm @ 9.7A, 10V
- Vgs(th) (Max) @ Id:4V @ 490µA
- Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1819 pF @ 400 V
- FET Feature:-
- Power Dissipation (Max):110W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Supplier Device Package:PG-TO263-3
- Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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