NTE2973
NTE Electronics, Inc.
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET-N-CHAN ENHANCEMENT TO-3P
- CategoryTransistors - FETs, MOSFETs - Single
-
ECAD Model
- Share
In Stock: 400
Can ship immediately
Pricing:
- 1$14.64
Quote It
Technical Details
- Series:-
- Package:Bag
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):900 V
- Current - Continuous Drain (Id) @ 25°C:14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:850mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2.9 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):275W (Tc)
- Operating Temperature:-55°C ~ 150°C
- Mounting Type:Through Hole
- Supplier Device Package:TO-3P
- Package / Case:TO-3P-3, SC-65-3
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