VMO1200-01F

Technical Details

• Series:HiPerFET™
• Package:Tray
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:1220A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:1.35mOhm @ 932A, 10V
• Vgs(th) (Max) @ Id:4V @ 64mA

• Gate Charge (Qg) (Max) @ Vgs:2520 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:-
• FET Feature:-
• Power Dissipation (Max):-
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Chassis Mount
• Supplier Device Package:Y3-Li
• Package / Case:Y3-Li