TK30A06N1,S4X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 60V 30A TO220SIS
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK30A06N1,S4X Datasheet
-
ECAD Model
- Share
In Stock: 815
Can ship immediately
Pricing:
- 1$0.97
- 50$0.74855
- 100$0.65196
- 500$0.48294
- 1,000$0.38635
- 2,500$0.35013
- 5,000$0.33806
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Technical Details
- Series:U-MOSVIII-H
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):60 V
- Current - Continuous Drain (Id) @ 25°C:30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:15mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1050 pF @ 30 V
- FET Feature:-
- Power Dissipation (Max):25W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220SIS
- Package / Case:TO-220-3 Full Pack
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