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Pricing:
  • 1$1.48
  • 75$1.18571
  • 150$1.03748
  • 525$0.80458
  • 1,050$0.6352

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Technical Details

  • Series:HEXFET®
  • Package:Tube
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:3.1mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.35V @ 100µA

 

  • Gate Charge (Qg) (Max) @ Vgs:59 nC @ 4.5 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:4880 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):135W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK (TO-251)
  • Package / Case:TO-251-3 Short Leads, IPak, TO-251AA

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