TK65E10N1,S1X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N CH 100V 148A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK65E10N1,S1X Datasheet
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ECAD Model
- Share
In Stock: 1,142
Can ship immediately
Pricing:
- 1$2.78
- 50$2.24177
- 100$2.0176
- 500$1.56924
- 1,000$1.30022
- 2,500$1.25539
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Technical Details
- Series:U-MOSVIII-H
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:148A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:4.8mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:81 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 50 V
- FET Feature:-
- Power Dissipation (Max):192W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
