TK17N65W,S1F
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 650V 17.3A TO247
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK17N65W,S1F Datasheet
-
ECAD Model
- Share
In Stock: 149
Can ship immediately
Pricing:
- 1$3.67
- 30$2.94744
- 120$2.68544
- 510$2.17457
- 1,020$1.83396
Quote It
Technical Details
- Series:DTMOSIV
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):650 V
- Current - Continuous Drain (Id) @ 25°C:17.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:200mOhm @ 8.7A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 900µA
- Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):165W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-247
- Package / Case:TO-247-3
