IPAN70R900P7SXKSA1

Technical Details

• Series:CoolMOS™ P7
• Package:Tube
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):700 V
• Current - Continuous Drain (Id) @ 25°C:6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:900mOhm @ 1.1A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 60µA

• Gate Charge (Qg) (Max) @ Vgs:6.8 nC @ 10 V
• Vgs (Max):±16V
• Input Capacitance (Ciss) (Max) @ Vds:211 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):17.9W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:PG-TO220 Full Pack
• Package / Case:TO-220-3 Full Pack