FCP650N80Z
ON Semiconductor
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 800V 10A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet FCP650N80Z Datasheet
-
ECAD Model
- Share
In Stock: 6,572,505
Can ship immediately
Pricing:
- 1$2.12
- 10$1.91466
- 100$1.53837
- 800$1.08024
- 1,600$0.99137
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Technical Details
- Series:SuperFET® II
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):800 V
- Current - Continuous Drain (Id) @ 25°C:10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:650mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id:4.5V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:1565 pF @ 100 V
- FET Feature:-
- Power Dissipation (Max):162W (Tc)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
