TK25E60X,S1X
Toshiba Electronic Devices and Storage Corporation
- Lifecycle status Active
- RoHS RoHS Compliant
- DescriptionMOSFET N-CH 600V 25A TO220
- CategoryTransistors - FETs, MOSFETs - Single
- Datasheet TK25E60X,S1X Datasheet
-
ECAD Model
- Share
In Stock: 273
Can ship immediately
Pricing:
- 1$4.2
- 50$3.37668
- 100$3.07653
- 500$2.49123
- 1,000$2.10104
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Technical Details
- Series:DTMOSIV-H
- Package:Tube
- Part Status:Active
- FET Type:N-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):600 V
- Current - Continuous Drain (Id) @ 25°C:25A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:125mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
- Vgs (Max):±30V
- Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 300 V
- FET Feature:-
- Power Dissipation (Max):180W (Tc)
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Supplier Device Package:TO-220
- Package / Case:TO-220-3
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