ATP216-TL-H

Technical Details

• Series:-
• Package:Bulk
• Part Status:Obsolete
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):50 V
• Current - Continuous Drain (Id) @ 25°C:35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:23mOhm @ 18A, 4.5V
• Vgs(th) (Max) @ Id:-

• Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:2.7 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):40W (Tc)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:ATPAK
• Package / Case:ATPAK (2 leads+tab)