PSMN1R6-40YLC,115

Technical Details

• Series:-
• Package:Bulk
• Part Status:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):-
• Rds On (Max) @ Id, Vgs:1.55mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id:1.95V @ 1mA

• Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:7790 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):288W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK56; Power-SO8
• Package / Case:SOT-1023, 4-LFPAK